| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 749093 | Solid-State Electronics | 2008 | 4 Pages |
Abstract
An InGaN/GaN light-emitting diode (LED) combined with a metal–oxide semiconductor (MOS) capacitor has been fabricated for high electrostatic discharge (ESD) protection. By connecting a MOS capacitor in parallel with the GaN-based LED, a level of defense against the ESD is significantly strengthened from 200 to 1900 V of human body mode (HBM), which corresponds to 6- to 7-fold enhancement in the ESD robustness of LEDs.
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Authors
R.W. Chuang, P.C. Tsai, Y.K. Su, C.H. Chu,