| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 749094 | Solid-State Electronics | 2008 | 5 Pages |
Abstract
A transistor with ON/OFF switching voltage much lower than the theoretical limit of conventional FETs is demonstrated. The basic concept is to use the gate-induced modulation of the longitudinal component of the electric field directly in the drain p–n+ junction of a thin film SOI FET. This modulation enables the gate to remarkably control the avalanche-impact-ionization of electrons and holes in the junction. Experimental results and a theoretical model are presented. The strong dependence of avalanche-impact-ionization current on the electric field intensity results in an extremely low switching voltage (6 mV/decade at 300 K).
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Electrical and Electronic Engineering
Authors
V. Dobrovolsky, F. Sizov, S. Cristoloveanu, S. Pavljuk,