Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
749186 | Solid-State Electronics | 2008 | 4 Pages |
Abstract
Carbon incorporation in strained-Si surface channel NMOSFET is investigated. Due to the ∼52% lattice mismatch between silicon and carbon, the channel is expected to have higher strain than strained-Si, indicating that the carrier mobility can be enhanced significantly. There is a ∼40% electron mobility enhancement for incorporated carbon content of 0.25% in strained-Si NMOSFETs compared to unstrained Si channels. The performance of channels with increased strain is not as high as theoretical predictions. This is due to the large Dit at the oxide/strained-Si:C interface and alloy scattering, which degrades carrier mobility enhancement.
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Authors
M.H. Lee, S.T. Chang, S. Maikap, C.-F. Huang,