| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 749199 | Solid-State Electronics | 2008 | 11 Pages |
Abstract
This paper will discuss the development of SiC lateral power junction field-effect transistors (JFETs) and ICs. Normally-off RESURF vertical-channel lateral power JFETs are fabricated and characterized. New results for the first demonstration of SiC Power ICs are presented and the potential for distributed DC–DC power converters at high frequencies is discussed.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Kuang Sheng, Yongxi Zhang, Ming Su, Jian H. Zhao, Xueqing Li, Petre Alexandrov, Leonid Fursin,