Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers

Linear and non-linear transport of holes in strained Si and SiGe on insulator inversion layers has been simulated. A deterministic method based on the Fourier expansion of the distribution function is proposed to solve the BTE. The model takes into account the fully anisotropic transition rates of the scattering mechanisms and the Pauli principle. The simulated low-field mobility and drift velocity reproduce experimental data for different MOS structures.