| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 749271 | Solid-State Electronics | 2008 | 4 Pages |
Abstract
A heterojunction device of Au/Fe-TPP/n-Si/Al was assembled by thermally evaporated deposition. The dark current density–voltage characteristics of device were investigated. Results showed a rectification behavior. Measurements of thermo electric power confirm that Fe-TPP thin film behaves as p-type semiconductors. Electronic parameters such as barrier height, diode ideality factor, series resistance, shunt resistance were found to be 0.83 eV, 1.5, 7 × 105 Ω and 2 × 1010 Ω, respectively. The Au/Fe-TPP/n-Si/Al device indicates a photovoltaic behavior with an open circuit voltage Voc of 0.52 V, short circuit current Isc of 2.22 × 10−6 A, fill factor FF of 0.49 and conversion efficiency 1.13% under white light illumination power 50 W/m2.
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Authors
M.S. Aziz,