Article ID Journal Published Year Pages File Type
749280 Solid-State Electronics 2008 4 Pages PDF
Abstract

On the surfaces of GaN-based light-emitting diodes (LEDs) having an n-side-up vertical electrode structure formed by the laser lift-off, various shapes of photoresist-patterned surface textures were formed by inductively coupled plasma etching and their effect on the light emission efficiencies was investigated. By the formation of various shapes of surface textures, the light output efficiency was increased from 37% to 45% compared to that without surface textures. The increase of light output efficiency was related to the increase of sidewall scattering, the decrease of reflected loss, and the decrease of cavity wall effect that occurs for the vertical LEDs by the increase of sidewall surface area.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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