Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
749282 | Solid-State Electronics | 2008 | 5 Pages |
Abstract
The static gain characteristics of N-p-N InP/GaAsxSb1âx/InP double heterojunction bipolar transistors (DHBTs) were studied as a function of the base arsenic (As) mole fraction x. Compared to the devices with a lattice-matched base (x = 0.51), a current gain improvement largely arising from a base current reduction is observed in DHBTs with higher As base mole fractions (and consequently a reduced type-II conduction band discontinuity ÎEC at the emitter-base heterojunction). Both the surface periphery and the intrinsic recombination currents decrease markedly as the base arsenic concentration increases. The present work therefore unambiguously demonstrates that the emitter type-II conduction band discontinuity between the InP emitter and the GaAsxSb1âx base enhances the undesirable emitter size effects (ESEs) and increases intrinsic recombination currents directly under the emitter contact.
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Authors
Y.P. Zeng, O. Ostinelli, H.G. Liu, C.R. Bolognesi,