Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
749283 | Solid-State Electronics | 2008 | 10 Pages |
Abstract
This paper models the time domain and frequency domain characteristics of the noise spectrum of a MOSFET device under varying EMI conditions. The theoretical results are compared with experimental measurements. Both sets of results reveal that the magnitude of the EMI-induced noise is governed by the pulse height, the output load, the parasitic capacitance, the interference frequency and the interference amplitude. Furthermore, it is shown that a higher interference amplitude or frequency increases the harmonic noise. The theoretical method presented in this paper provides a convenient means of evaluating the EMI effects and signal-to-noise ratio (SNR) of MOSFETs and similar wavelength devices.
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Engineering
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Authors
Han-Chang Tsai, Kuo-Chang Wang,