Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
749286 | Solid-State Electronics | 2008 | 7 Pages |
Abstract
For the first time, a simple analytical model in the form of explicit formulas was derived for on-silicon-chip inductors. This analytical model can accurately calculate self-resonance frequencies (fSR) in TEM mode and eddy current mode corresponding to very high and very low substrate resistivities (ρSi). Furthermore, this derived model can predict and explain the interesting result that fSR keeps nearly a constant independent of ρSi in TEM and eddy current modes but is critically determined by the inductance and parasitic capacitances. The simple model is useful in on-silicon-chip inductor design for increasing fSR under specified inductance target for broadband RF circuit design and applications.
Keywords
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Jyh-Chyurn Guo, Teng-Yang Tan,