| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 749296 | Solid-State Electronics | 2008 | 6 Pages |
Abstract
In the paper, a relationship of detectivity with material parameters is given by a theoretical calculation. An In1−xGaxAs photovoltaic detector structure with x = 0.47 is used as an example for this study. The results show that the detectivity of a photodetector can be enhanced by optimizing the carrier concentration, thickness and surface recombination velocity during the structure growth and device fabrication.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Longhai Li, Jingzhi Yin, Bao Shi, Minshuai Wang, Guotong Du, Yiding Wang, Yixin Jin,