| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 749305 | Solid-State Electronics | 2008 | 4 Pages |
Abstract
In this work a novel device structure of a photoconductive sensor manufactured in In0.52Al0.48As/In0.53Ga0.47As heterostructures with a 100 nm wide T shape gate patterned on the top of a two dimensional electron gas (2DEG) was proposed. The nanosize gate defines the ultra short conducting channel underneath it, leading to the ballistic transport of the photoconductive electrons. The photo-electronic response in the infrared wavelength of 1.16 μm was measured under various gate voltages. The working mechanism and the prospect of such kind of sensors were discussed.
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Authors
Yan Zhang, Xin Cao, Zheng He, Chunquan Zhuang, Yifang Chen, Jiaxiong Fang,