Article ID Journal Published Year Pages File Type
749309 Solid-State Electronics 2008 5 Pages PDF
Abstract

We demonstrate a very low-power CMOS LNA for ultra-wideband (UWB) applications using current-reused structure. The LNA is fabricated in a 0.18 μm 1P6M standard CMOS process. The IC prototype achieves a power gain of 9–11.5 dB, a noise figure (NF) of 5–5.6 dB, and the input/output return loss is higher than 8.6/8 dB, while only 9.4 mW power consuming from 3.1 to 10.6 GHz.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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