Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
749309 | Solid-State Electronics | 2008 | 5 Pages |
Abstract
We demonstrate a very low-power CMOS LNA for ultra-wideband (UWB) applications using current-reused structure. The LNA is fabricated in a 0.18 μm 1P6M standard CMOS process. The IC prototype achieves a power gain of 9–11.5 dB, a noise figure (NF) of 5–5.6 dB, and the input/output return loss is higher than 8.6/8 dB, while only 9.4 mW power consuming from 3.1 to 10.6 GHz.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
H.L. Kao, K.C. Chang,