| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 749313 | Solid-State Electronics | 2008 | 6 Pages |
Abstract
In this paper, a new 20-element small-signal equivalent circuit for GaN HEMTs is proposed and correspondingly, a direct extraction method is developed. Compared with the 16-element conventional GaAs-based HEMT small-signal model (SSM), two parasitic distributed inter-electrode extrinsic capacitances and two additional feedback intrinsic resistances are considered. The new modeling approach for GaN HEMTs is verified by comparing the simulated small-signal S-parameter with the measured data over wide frequency and bias ranges.
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Authors
Jing Lu, Yan Wang, Long Ma, Zhiping Yu,