| Article ID | Journal | Published Year | Pages | File Type | 
|---|---|---|---|---|
| 749364 | Solid-State Electronics | 2007 | 7 Pages | 
Abstract
												The performance of carbon nanotube-based transistors is analyzed numerically, employing the non-equilibrium Green's function formalism. The effect of geometrical parameters on the device performance is investigated. Our results clearly show that device characteristics can be optimized by appropriately selecting geometrical parameters.
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											Authors
												M. Pourfath, H. Kosina, S. Selberherr, 
											