| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 749367 | Solid-State Electronics | 2007 | 7 Pages |
Abstract
In this paper, an investigation of the benefits of deep ultra violet lithography for the manufacturing of Trench MOSFETs and its impact on device performance is presented. We discuss experimental results for devices with a pitch size down to 0.6 μm fabricated with an unconventional implant topology and a simplified manufacturing scheme. The fabricated Trench MOSFETs are benchmarked against previously published TrenchMOS technologies by de-embedding the parasitic substrate resistance, revealing a record-low specific on-resistance of 5.3 mΩ mm2 at a breakdown voltage of 30 V (Vgs = 10 V).
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Pierre Goarin, Rob van Dalen, Gerhard Koops, Christelle Le Cam,