Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
749381 | Solid-State Electronics | 2007 | 10 Pages |
Abstract
In this paper, the trapping phenomena in silicon-based nanocrystalline semiconductors are studied. We propose a general and complete model for optical charging spectroscopy measurements, which takes into account the trapping–detrapping–retrapping processes and all the types of discharge currents that can occur in a nanocrystalline system. The model was applied to the measurements performed on multi-quantum well structures, (nc-Si/CaF2)50, as well as on nanocrystalline porous silicon. This way, the trap parameters that are not directly measurable were determined.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
M.L. Ciurea, V. Iancu, M.R. Mitroi,