Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
749387 | Solid-State Electronics | 2007 | 5 Pages |
Abstract
We present material and structural criteria for ultra-fast Kerr nonlinear switching in optical resonant cavities. The material criterion with a new nonlinear figure of merit suggests that Si, GaAs and even AlGaAs cannot be considered as the materials for resonator-enhanced Kerr nonlinear switch at 1.55 μm (0.8 eV) of wavelength, due to the large free-carrier nonlinearity excited by two-photon or three-photon process. Insulators with wider band-gaps such as SiO2 and Si3N4 will be interesting materials to investigate for this purpose.
Related Topics
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Electrical and Electronic Engineering
Authors
Kazuhiro Ikeda, Yeshaiahu Fainman,