| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 749416 | Solid-State Electronics | 2007 | 5 Pages |
Abstract
Accurate threshold voltage (VT) modeling of bulk-MOSFETs is important for device optimization and circuit simulation. Existing VT models cannot model the impact of source/drain junction depth on VT rolloff. A new model is proposed that can accurately model bulk-MOSFET VT including the source/drain junction depth. The model also provides a scale-length that can be used to rapidly predict the minimum channel-length for a given set of technology parameters.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Raghunath Murali, James D. Meindl,