Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
749421 | Solid-State Electronics | 2007 | 5 Pages |
Abstract
A semi-analytical model for Schottky diodes with ideality factors (η) greater than 1.00 is presented with an experimental verification from n-type GaAs Schottky diodes (η = 1.00–2.47 over T = 83–323 K). Adopting a correcting ideality factor in the distribution function, an accurate modeling of temperature-sensitive variations of current–voltage characteristics and accurate extraction of Schottky barriers are obtained with a modified Richardson constant. Temperature-dependent Schottky barriers (ϕbn = 0.928 V∣83 K–0.837 V∣323 K), obtained from the semi-analytical model, are consistent with the variation of the energy bandgap with temperature which is known to be the main cause for the change of Schottky barriers.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Dong Myong Kim, Dae Hwan Kim, Soon Young Lee,