Quantum-wire effects in trigate SOI MOSFETs

Trigate SOI transistors have been modeled using the Poisson and Schrödinger equations. In devices with a large enough cross section, inversion channels form at the Si/SiO2 interfaces, but in devices with a small section, volume inversion is clearly visible. A transition between a one-dimensional density of states to a two-dimensional density of states is observed when the height of the fin is increased. Current oscillations are experimentally observed when the gate voltage is increased. These are due to a quantum-wire effect in which electron mobility is affected by intersubband scattering.