| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 749482 | Solid-State Electronics | 2007 | 8 Pages |
Abstract
This paper provides a comprehensive analysis of thermal resistance of trench isolated bipolar transistors on SOI substrates based on 3D electro-thermal simulations calibrated to experimental data. The impact of emitter length, width, spacing and number of emitter fingers on thermal resistance is analysed in detail. The results are used to design and optimise transistors with minimum thermal resistance and minimum transistor area.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
S. Nigrin, G.A. Armstrong, A. Kranti,