Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
749484 | Solid-State Electronics | 2007 | 7 Pages |
Abstract
In this paper, “true” Silicon-On-Nothing (SON) MOSFETs fabricated by a new technique, consisting in Si layer transfer over a pre-etched cavity, are investigated. The process has no potential limitation with regards to the device dimensions as well as to the thicknesses of Si film and so-called “nothing” layers. Comparing to single-gate (SG) fully-depleted (FD) SOI MOSFETs fabricated on the same wafer, improved electrical characteristics of SON MOSFETs are demonstrated. Self-heating effect, which can be considered as the main drawback of SON devices, is experimentally addressed for the first time. Finally, the source-to-drain coupling through the substrate is demonstrated to be practically suppressed in such device architecture.
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Authors
V. Kilchytska, T.M. Chung, B. Olbrechts, Ya. Vovk, J.-P. Raskin, D. Flandre,