Carrier transport mechanisms and photovoltaic properties of Au/p-ZnPc/Al device

The dark current density–voltage characteristic of Au/ZnPc/Al device at room temperature has been investigated. Results showed a rectification behavior. At low forward bias, the current density was found to be ohmic, while at high voltages, space charge limited the current mechanism dominated by exponential trapping levels. Junction parameters such as rectification ratio (RR), series resistance (Rs), and shunt resistance (Rsh) were found to be 9.42, 9.72 MΩ, and 0.88 × 103 MΩ, respectively. The current density–voltage characteristics under white light illumination (100 W/m2) gives values of 0.55 V, 3 × 10−3 A/m2, 0.18 and 5.8 × 10−4% for the open circuit voltage, Voc, the short circuit current density (Jsc), the fill factor (FF), and conversion efficiency (η), respectively.