Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
749589 | Solid-State Electronics | 2007 | 6 Pages |
Abstract
We propose and demonstrate a new lateral structure InP/InGaAs double heterojunction phototransistor (DHPT) which utilizes the interchangeability of the emitter and collector in double heterostructure. The lateral structure DHPT has the potential to have better high-frequency performance and requires simpler epitaxial layers than a vertical structure device. At 2 V bias, optical gains of 163 and 124 were obtained in 50 × 50 μm2 area device and 20 × 20 μm2 device, respectively. Frequency response measurement exhibits optical power gains of 32 dB at 100 MHz and 8 dB at 1 GHz in the 20 × 20 μm2 device. Frequency response is also calculated numerically for a case of smaller active area device.
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Authors
Junghwan Kim, W.B. Johnson, S. Kanakaraju, Chi H. Lee,