Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
749591 | Solid-State Electronics | 2007 | 5 Pages |
Abstract
In this work, an analytical channel thermal noise model for short channel MOSFETs is derived. The transfer function of the noise was derived by following the Tsividis’ method. The proposed model takes into account the channel length modulation, velocity saturation, and carrier heating effects in the gradual channel region. Modeling results show good agreements with the measured noise data.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Jongwook Jeon, Jong Duk Lee, Byung-Gook Park, Hyungcheol Shin,