Article ID Journal Published Year Pages File Type
749591 Solid-State Electronics 2007 5 Pages PDF
Abstract

In this work, an analytical channel thermal noise model for short channel MOSFETs is derived. The transfer function of the noise was derived by following the Tsividis’ method. The proposed model takes into account the channel length modulation, velocity saturation, and carrier heating effects in the gradual channel region. Modeling results show good agreements with the measured noise data.

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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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An analytical channel thermal noise model for deep-submicron MOSFETs with short channel effects
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