| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 749594 | Solid-State Electronics | 2007 | 4 Pages |
Abstract
Pentacene phototransistors (PTs) prepared with a thin film transistor (TFT) configuration were investigated as a red light sensor. The pentacene TFTs showed an efficient photo-current response under various intensities of both modulated or continuous red light. The pentacene PTs showed a reliable high responsivity of ∼1 A/W and the ratio of photocurrent to dark current (IPh/IDark) was 9000 under visible light at a wavelength of 650 nm due to the relatively small band gap of pentacene.
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Engineering
Electrical and Electronic Engineering
Authors
Yong-Young Noh, Dong-Yu Kim,