Article ID Journal Published Year Pages File Type
749630 Solid-State Electronics 2006 5 Pages PDF
Abstract
Transient processes of Ge/Si hetero-nanocrystal floating gate memories are simulated numerically. Compared with Si nanocrystal memories, Ge/Si hetero-nanocrystal memories show similar writing and erasing efficiency with a weaker writing saturation and markedly improved retention characteristics.
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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Preview
Transient processes in a Ge/Si hetero-nanocrystal p-channel memory
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