| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 749644 | Solid-State Electronics | 2006 | 8 Pages |
Abstract
Analytical models of drain current of strained-Si/strained-Si1−YGeY/relaxed-Si1−XGeX (X < Y) n-channel and p-channel MOSFETs are presented. The field-dependent mobility variations and velocity saturation of carriers are taken into account in these models. The drain current model of p-channel MOSFET considers carrier transport at the top heterointerface in SiGe as well as at the Si/SiO2 interface. These models have been implemented in SABER, a circuit simulator. The results from the models show excellent agreement with experimental data.
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Authors
B. Bindu, Nandita DasGupta, Amitava DasGupta,