Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
749645 | Solid-State Electronics | 2006 | 4 Pages |
Abstract
By extending the conduction band structure, this paper sets up an analytical model in ZnS. We have used this model to make a Monte Carlo simulation of electron scattering. The relevant scattering mechanisms for electrons include optical phonons, acoustic, intervalley and interband scattering and impact ionization. Our calculated density of states (DOS) and scattering curves are compared with the results obtained from the old analytical model and the full band model. It has been shown that the model agrees essentially with the full band method and improves calculation precision. Another important work is to reduce program computation time by using the method of data fitting to scattering rate curves.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Qing-fang He, Zheng Xu, De-ang Liu, Xu-rong Xu,