| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 749646 | Solid-State Electronics | 2006 | 8 Pages |
Abstract
In this paper we present and characterize a-Si1−xCx:H thin film transistors, TFTs, fabricated by PECVD deposition. Precise modeling and parameter extraction for these devices was done using a unified procedure previously developed by us for amorphous, polycrystalline, nanocrystalline and organic TFTs. The behavior with temperature and stress of the extracted parameters is analyzed to determine similarities and differences with respect to a-Si:H TFTs. Electrical simulation allowed to estimate the localized traps energy distribution.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
M. Estrada, A. Cerdeira, L. Resendiz, R. García, B. Iñiguez, L.F. Marsal, J. Pallares,