Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
749729 | Solid-State Electronics | 2006 | 5 Pages |
Abstract
An efficient genetic-algorithm-based (GA-based) technique for modeling and analysis of RF heterojunction bipolar transistors (HBTs) has been successfully established. This mixed-mode optimization method focuses on complementing the GA with a set of generalized analytic-modeling equations (GAMEs), requiring no special assumptions, to effectively extract small-signal parameters. Over a wide range of biasing conditions, consistent results between the GA-derived and measured S-parameters on the pnp InGaAs collector-up HBT as well as npn SiGe HBTs, which can be used in small high-power amplifiers for mobile communication systems, clearly demonstrate the superiority of the proposed approach.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
H.C. Tseng,