Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As–In0.40Al0.60As–InP HEMT MMIC technology

The basic active and passive elements for a 50-nm InGaAs–InAlAs–InP HEMT process with pseudomorphic InGaAs channel have been designed and realized. InP HEMTs with 50-nm gate length, metal–insulator–metal (MIM) capacitors and thin film resistors (TFRs) have been designed and fabricated. A 2 × 15 μm HEMT showed an extrinsic peak transconductance of 1130 mS/mm at a drain–source voltage of 2.0 V. A 2 × 35 μm HEMT exhibited a current gain cut-off frequency of 200 GHz and a power gain cut-off frequency of 310 GHz at a drain–source voltage of 1.1 V. Passive device results included 85 Ω/□ tantalum nitride TFRs and 300 pF/mm2 Si3N4 MIM capacitors. The integration of the components in a microstrip-based monolithic microwave integrated circuit (MMIC) process has been demonstrated by designing, processing and testing of a wideband resistive feedback amplifier.