| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 749811 | Solid-State Electronics | 2006 | 5 Pages |
Abstract
A modified Angelov model for InGaP/InGaAs enhancement-mode (E-mode) and depletion-mode (D-mode) pHEMTs is presented which achieves a good agreement with the device DC and microwave performance. This model is based on the Angelov model, by modifying the formula to have comprehensive bias-dependent descriptions for nonlinear behaviors of the devices. The measured and model-predicted device DC I–V curves, S-parameters, and power performance have been compared. Good correspondences between measurement and simulation power performance up to the third-order inter-modulation product are demonstrated for E-mode and D-mode pHEMTs simultaneously, which confirm the validity of this model.
Related Topics
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Engineering
Electrical and Electronic Engineering
Authors
Chia-Shih Cheng, Yuan-Jui Shih, Hsien-Chin Chiu,