| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 749812 | Solid-State Electronics | 2006 | 4 Pages |
Abstract
Some expressions of the normalized surface capacitance for non-equilibrium MOSFET proposed in [Kapoor Abhishek, Jindal RP. Modeling MOSFET surface capacitance behavior under non-equilibrium. Solid-State Electron 2005;49:976–80] have been further discussed and the calculation of the MOSFET surface capacitance behavior under non-equilibrium conditions has been compared based on the device physics analysis.
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Authors
Jin He, Xing Zhang, Yangyuan Wang,