Article ID Journal Published Year Pages File Type
749818 Solid-State Electronics 2006 4 Pages PDF
Abstract

This paper reports the effects of dose irradiation on FinFETs. A threshold voltage shift of 100 mV is observed after irradiation at a dose of 300 krad(SiO2). The creation of oxide charges reduces the threshold voltage at the bottom of the device, while the generation of interface traps increases the threshold voltage at the sidewalls of the fin. The leakage current and the subthreshold slope do not degrade appreciably after irradiation to 300 krad(SiO2).

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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