Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
750083 | Solid-State Electronics | 2017 | 5 Pages |
Abstract
Inductively coupled plasma-chemically vapor deposited (ICP-CVD) SiNx was grown on Si substrates using a SiH4/NH3/He chemistry at 150°C. The influence of source power, chamber pressure, rf chuck power and percentage SiH4 on the wet (in BOE) and dry (in ICP SF6/Ar discharges) etch rates of the SiNx was investigated. The dry etch rates are found to strongly increase with stress in the film above a threshold of ∼500 MPa, while the wet etch rates increase rapidly with source power, chamber pressure and hydrogen content.
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Authors
Y.B Hahn, J.W Lee, K.D Mackenzie, D Johnson, S.J Pearton, F Ren,