Parasitic leakage resonance-free HRS MEMS package for microwave and millimeter-wave

A high resisitivity silicon (HRS, 10 kΩ cm) micro electro mechanical system (MEMS) package using a lightly-doped silicon (Si) chip carrier for coplanar waveguide (CPW) microwave and millimeter-wave integrated circuits (MMICs) is proposed in order to reduce parasitic problems of leakage, coupling, and resonance. The proposed chip carrier scheme is verified by fabricating and measuring a HRS CPW and a package on three types of carriers (conductor-backed metal, lightly-doped Si, and HRS) in the frequency range from 0.5 to 40 GHz. The proposed MEMS package using the lightly-doped (15 Ω cm) Si chip carrier and the HRS package shows the low loss and no parasitic leakage resonance since the lightly-doped Si chip carrier effectively absorbs and suppresses the parasitic leakage resonance. The HRS MEMS package for a CPW MMIC has an insertion loss (S21) of 2.0 dB and a power loss (PL) of 6.0 dB up to 40 GHz, while the insertion loss of a half feed-through package is less than 0.9 dB up to 40 GHz.