A new high-temperature thermal sensor based on large-grain polysilicon on insulator

A new high-temperature thermal sensor based on large-grain polysilicon film formed by metal-induced lateral crystallization (MILC) is proposed. The sensor demonstrates a positive temperature coefficient (PTC) characteristic from 130 °C to high temperatures above 600 °C. Its fabrication process is more cost-effective than its silicon on insulator (SOI) counterpart, and its performance is better than the sensor based on small-grain polysilicon formed by solid-phase crystallization (SPC). Therefore, the proposed sensor is more suitable to be integrated into single-chip CMOS-MEMS gas-sensor system for monitoring the high temperature of sensing membranes.