| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 752598 | Solid-State Electronics | 2016 | 5 Pages |
Abstract
DC and pulsed transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) have been systematically investigated. A significant difference of transconductance linearity between DC and gate-pulsed measurements is clearly observed. The acceptor-like traps in the barrier layer under the gate is the main cause of non-linear behavior of AlGaN/GaN HEMTs transconductance. A physical model has been constructed to explain the phenomenon. In the modeling, an acceptor-like trap concentration of 1.2 × 1019 cm−3 with an energy level of 0.5 eV below the conduction band minimum shows the best fit to measurement results.
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Authors
Jiangfeng Du, Nanting Chen, Zhiguang Jiang, Zhiyuan Bai, Yong Liu, Yang Liu, Qi Yu,