Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
752632 | Solid-State Electronics | 2015 | 5 Pages |
Abstract
We report the fabrication of gallium nitride (GaN)-based light-emitting diode (LED) with uniform and monolayer graphene as transparent current spreading layer. Two-dimensional graphene successfully provides efficient current spreading and hole injection into the active layers of the LEDs for light emission. To further reduce the ohmic contact resistance between p-GaN and graphene film, ultrathin NiOx inter-layer is introduced in the device, improving its electrical and optical performance.
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Authors
Caichuan Wu, Fengyuan Liu, Bin Liu, Zhe Zhuang, Jiangping Dai, Tao Tao, Guogang Zhang, Zili Xie, Xinran Wang, Rong Zhang,