Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
752768 | Solid-State Electronics | 2013 | 4 Pages |
•IGZO TFT with GeO2/TiO2/GeO2 dielectric has been fabricated on PC substrate at room temperature.•RT Flexible TFT exhibits small gate swing of 0.132 V/decade and good Ion/Ioff ratio of 2.4 × 107.•Such good performance was attributed to combined effect of higher-κ TiO2 and large band gap GeO2.
This study demonstrates the feasibility of producing an InGaZnO thin-film transistor (TFT) using a high-κ germanium oxide (GeO2)/titanium oxide (TiO2)/GeO2 gate stack on a flexible polycarbonate substrate. The flexible TFT exhibited a small sub-threshold swing of 0.132 V/decade, an acceptable field effect mobility of 8 cm2/(V s), and a robust Ion/Ioff ratio of 2.4 × 107. The improved device performance can be attributed to the combined effect of high-κ TiO2 and the large band gap of GeO2 that exhibits a tendency to remain in a Ge4+ oxidation state at room temperature.