Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
752845 | Solid-State Electronics | 2013 | 5 Pages |
•A GAA BE-SONOS device are demonstrated for flash memory applications.•The vertical Si pillar BE-SONOS with a Ti metal gate were fabricated.•The devices exhibited well-behaved memory characteristics.•The BE-SONOS can provide efficient hole tunneling for excellent erase performance.
In this paper, a gate-all-around bandgap-engineered silicon–oxide–nitride–oxide–silicon device with a vertical silicon pillar structure and a Ti metal gate are demonstrated for a potential solution to overcome the scaling-down of flash memory device. The devices were fabricated using CMOS-compatible technology and exhibited well-behaved memory characteristics in terms of the program/erase window, retention, and endurance properties. Moreover, the integration of the Ti metal gate demonstrated a significant improvement in the erase characteristics due to the efficient suppression of the electron back tunneling through the blocking oxide.