| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 752877 | Solid-State Electronics | 2012 | 5 Pages |
We developed the solution processed Ag source/drain electrodes for stable organic thin-film transistor (OTFT) with 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene). Even though there is a large hole injection barrier between Ag and TIPS-pentacene, the TFT with solution-processed Ag shows good performance. It is due to the continuous formation of organic semiconductor between solution-processed Ag electrodes and TFT channel region with well-organized π–π stacking. The electrical stability of the TFT is much better than that of the TFT using sputtered Ag source/drain electrodes.
► TIPS-pentacene OTFT with solution-processed source/drain Ag electrode. ► High performance and stable TIPS pentacene OTFT. ► The continuous formation of TIPS-pentacene between Ag electrodes and TFT channel region. ► Ordering of TIPS-pentacene crystalline on solution-processed Ag electrode.
