Hopping and trap controlled conduction in Cr-doped SrTiO3 thin films

This study examined the electrical conduction of Cr-doped SrTiO3 thin films in a metal (Pt)–insulator–metal (La0.5Sr0.5CoO3) structure. Two DC transport mechanisms, variable range hopping and the trap-controlled space-charge-limited current conduction, were found to be responsible for the conduction behavior. Resistance switching mechanism involved the trapping/detrapping of injected carriers at the weakly localized states.

► We investigate the electrical conduction of Cr-doped SrTiO3 thin films. ► Variable range hopping as a transport mechanism. ► Trap-controlled space-charge-limited current conduction as a transport mechanism. ► Resistance switching mechanism involves the trapping/detrapping of injected carriers.