Approximate closed-form solution of ambipolar input voltage equation for the common-gate symmetric FinFET

We propose an accurate closed-form algorithm for solving recently developed input voltage equation including ambipolar effects in the common gate symmetric FinFET. The new algorithm is verified for both the surface potential ψs and its derivatives and includes previously published analytical approximation for ψs as a special case when ambipolar effects can be neglected.

► We propose an accurate closed-form algorithm for solving the ambipolar IVE of common gate symmetric FinFETs. ► We show that the earlier unipolar approximation of the IVE can be derived as a special case of the more general ambipolar IVE. ► The new algorithm can be used with any surface potential based compact model of common gate symmetric FinFETs.