| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 752986 | Solid-State Electronics | 2012 | 5 Pages |
Effects of applied bias voltage on tunneling electroresistance and tunneling magnetoresistance in multiferroic tunnel junctions with ferroelectric barrier and dissimilar ferromagnetic electrodes are theoretically investigated. Taking into account the electric field effect on permittivity of ferroelectric films, the applied bias voltage could creates a sizable influence on the permittivity-dependent tunneling electroresistance and tunneling magnetoresistance. The calculations could indicate a prospective way for reading the states of tunnel junction with a pronounced difference in resistance, which may provide some contributions to practical applications in memories and spintronics.
► Effects of applied bias voltage on the properties of junctions were investigated. ► The electric-field-dependent permittivity was considered in the tunnel junctions. ► The applied bias voltage creates a large influence on the properties of junctions. ► The calculations partially agree with the current experiment results.
