| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 752998 | Solid-State Electronics | 2012 | 7 Pages |
Abstract
⺠Single-sided non-overlapped implantation nMOSFETs for multiple memory functions. ⺠Mask ROMs programmed by the source drain extension (SDE) implantation. ⺠EEPROMs programmed by trapping charges in the side-wall nitride spacers. ⺠Antifuses programmed by introducing the punch-through stress at the drain side.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
E.S. Jeng, Y.F. Chen, C.C. Chang, K.M. Peng, S.W. Chou, C.W. Ho, C.F. Huang, J. Gong,