Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
753002 | Solid-State Electronics | 2012 | 5 Pages |
In this paper, we present an explicit compact quantum model for the gate tunneling current in double-gate metal–oxide–semiconductor field-effect transistors (DG-MOSFETs). Specifically, an explicit closed-form expression is proposed, useful for the fast evaluation of the gate leakage in the context of electrical circuit simulators. A benchmarking test against 1D self-consistent numerical solution of Schrödinger–Poisson (SP) equations has been performed to demonstrate the accuracy of the model.
► We present an explicit compact quantum model for the gate tunneling current in (DG-MOSFET). ► An explicit expression is proposed and useful for the gate leakage in the context of electrical circuit simulators. ► This model was checked via comparison with self-consistent SP simulations.