| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 753075 | Solid-State Electronics | 2011 | 6 Pages |
Abstract
The first realization of a pure Germanium bulk vertical Tunneling Field-Effect Transistor (vTFET) and a high Ion/Ioff ratio for a pure Silicon bulk vTFET are both reported. The manufacturing process, the electrical characteristics and key features and the differences of the two varieties of vTFET devices (pure Germanium bulk vTFET and pure Silicon bulk vTFET) will be discussed in detail.
► We report on the first realization of a pure Ge bulk vertical TFET. ► We compare the performance of a pure Ge bulk vTFET with a pure Si bulk vTFET. ► We examine that the main transport mechanism in the vTFETs is due to BTB tunneling.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
D. Hähnel, M. Oehme, M. Sarlija, A. Karmous, M. Schmid, J. Werner, O. Kirfel, I. Fischer, J. Schulze,